Technical parameters/rated voltage (DC): | -100 V |
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Technical parameters/rated current: | -16.5 A |
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Technical parameters/drain source resistance: | 190 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 3.75W (Ta), 100W (Tc) |
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Technical parameters/drain source voltage (Vds): | 100 V |
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Technical parameters/breakdown voltage of gate source: | ±30.0 V |
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Technical parameters/Continuous drain current (Ids): | 16.5 A |
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Technical parameters/Input capacitance (Ciss): | 1100pF @25V(Vds) |
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Technical parameters/rated power (Max): | 3.75 W |
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Technical parameters/dissipated power (Max): | 3.75W (Ta), 100W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQB17P10
|
Fairchild | 功能相似 | D2PAK |
100V P沟道MOSFET 100V P-Channel MOSFET
|
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