Technical parameters/rated voltage (DC): | 30.0 V |
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Technical parameters/rated current: | 11.5 A |
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Technical parameters/drain source resistance: | 8.20 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 1.8W (Ta) |
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Technical parameters/Input capacitance: | 5.07 nF |
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Technical parameters/gate charge: | 33.0 nC |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 11.5 A |
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Technical parameters/rise time: | 18.0 ns |
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Technical parameters/Input capacitance (Ciss): | 5070pF @15V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/dissipated power (Max): | 1.8W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SMD-8 |
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Dimensions/Packaging: | SMD-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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