Technical parameters/rated voltage (DC): | -20.0 V |
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Technical parameters/rated current: | -10.0 A |
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Technical parameters/drain source resistance: | 11.0 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.8 W |
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Technical parameters/Input capacitance: | 4.48 nF |
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Technical parameters/gate charge: | 41.0 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | -200 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 10.0 A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 4481pF @10V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/descent time: | 15 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.8W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SSOT-8 |
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Dimensions/Length: | 4.06 mm |
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Dimensions/Width: | 3.3 mm |
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Dimensions/Height: | 1.02 mm |
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Dimensions/Packaging: | SSOT-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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