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Model FDD107AN06LA0
Description MOSFET N-CH 60V 10.9A D-PAK
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7823) Minimum order quantity(1)
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Technical parameters/dissipated power:

25W (Tc)

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Input capacitance (Ciss):

360pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

25W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD20N06TM FQD20N06TM Rochester 类似代替 TO-252
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQD20N06TM, 17 A, Vds=60 V, 3引脚 DPAK (TO-252)封装
PDF
FQD20N06TM FQD20N06TM Fairchild 类似代替 TO-252-3
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQD20N06TM, 17 A, Vds=60 V, 3引脚 DPAK (TO-252)封装
PDF

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