Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 80A |
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Encapsulation parameters/Encapsulation: | TO-263 |
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Dimensions/Packaging: | TO-263 |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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ON Semiconductor | 功能相似 | TO-263-3 |
N沟道逻辑电平增强模式场效应晶体管 N-Channel Logic Level Enhancement Mode Field Effect Transistor
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