Technical parameters/dissipated power: | 83W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 900 V |
|
Technical parameters/rise time: | 9 ns |
|
Technical parameters/Input capacitance (Ciss): | 350pF @600V(Vds) |
|
Technical parameters/descent time: | 5 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 83W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | TO-263-8 |
|
Dimensions/Packaging: | TO-263-8 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
C3M0120090J
|
CREE | 功能相似 | TO-263-8 |
晶体管, MOSFET, N沟道, 22 A, 900 V, 0.12 ohm, 15 V, 2.1 V
|
||
C3M0120090J-TR
|
Wolfspeed | 类似代替 | TO-263-8 |
C3M0120090J-TR 编带
|
||
C3M0120090J-TR
|
CREE | 类似代替 | TO-263-8 |
C3M0120090J-TR 编带
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review