Technical parameters/tolerances: | ±5 % |
|
Technical parameters/forward voltage: | 900mV @10mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 5 mA |
|
Technical parameters/voltage regulation value: | 12 V |
|
Technical parameters/rated power (Max): | 400 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35-2 |
|
Dimensions/Length: | 4.25 mm |
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Dimensions/Width: | 1.85 mm |
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Dimensions/Packaging: | DO-35-2 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ |
|
Physical parameters/temperature coefficient: | 8.4 mV/K |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZX79-C12
|
Fairchild | 完全替代 | DO-35 |
NXP BZX79-C12 单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
|
|
ETC | 完全替代 |
NXP BZX79-C12 单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79-C12
|
Nexperia | 完全替代 | DO-35 |
NXP BZX79-C12 单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79-C12
|
Silicon Standard | 完全替代 |
NXP BZX79-C12 单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
|||
BZX79-C12
|
NXP | 完全替代 | DO-35 |
NXP BZX79-C12 单管二极管 齐纳, 12 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79-C12,113
|
Nexperia | 类似代替 | DO-204AH |
500mW，BZX79 系列，NXP Semiconductors ### 齐纳二极管，NXP Semiconductors
|
||
BZX79-C12,143
|
Nexperia | 完全替代 | DO-204AH |
ALF 12.05V 0.5W(1/2W)
|
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