Technical parameters/tolerances: | ±2 % |
|
Technical parameters/forward voltage: | 1.5V @200mA |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/test current: | 5 mA |
|
Technical parameters/voltage regulation value: | 9.1 V |
|
Technical parameters/rated power (Max): | 500 mW |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/dissipated power (Max): | 0.5 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Length: | 3.9 mm |
|
Dimensions/Width: | 1.7 mm |
|
Dimensions/Height: | 1.7 mm |
|
Dimensions/Packaging: | DO-35 |
|
Physical parameters/operating temperature: | -65℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
VISHAY | 功能相似 | DO-35-2 |
稳压二极管 RECOMMENDED ALT 78-BZX55B9V1
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||
BZX55F9V1-TR
|
Vishay Semiconductor | 功能相似 | DO-35-2 |
稳压二极管 RECOMMENDED ALT 78-BZX55B9V1
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||
|
|
NXP | 功能相似 | SOT-353 |
Zener Diode, 9.1V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
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BZX79-B9V1
|
Good-Ark Electronics | 功能相似 | DO-35 |
Zener Diode, 9.1V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-35, HERMETIC SEALED, GLASS PACKAGE-2
|
||
|
BZX79B9V1
|
EIC | 功能相似 | DO-35 |
Zener Diode, 9.1V V(Z), 1.98%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS PACKAGE-2
|
||
|
BZX79B9V1
|
Electronics Industry | 功能相似 |
Zener Diode, 9.1V V(Z), 1.98%, 0.5W, Silicon, Unidirectional, DO-35, ROHS COMPLIANT, HERMETICALLY SEALED, GLASS PACKAGE-2
|
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