Technical parameters/breakdown voltage: | 9.1 V |
|
Technical parameters/dissipated power: | 400 W |
|
Technical parameters/clamp voltage: | 13.4 V |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 7.78V |
|
Technical parameters/test current: | 1 mA |
|
Technical parameters/Maximum forward surge current (Ifsm): | 40 A |
|
Technical parameters/peak pulse power: | 400 W |
|
Technical parameters/forward voltage (Max): | 3 V |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -50 ℃ |
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Technical parameters/operating temperature: | -50℃ ~ 175℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | DO-15 |
|
Dimensions/Packaging: | DO-15 |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
DB Lectro | 功能相似 |
Diode: transil; 400W; 8.2V; unidirectional; ±5%; DO15
|
|||
|
|
Vishay Semiconductor | 功能相似 |
Diode: transil; 400W; 8.2V; unidirectional; ±5%; DO15
|
|||
BZW04-7V0
|
Diotec Semiconductor | 功能相似 | DO-15 |
Diode: transil; 400W; 8.2V; unidirectional; ±5%; DO15
|
||
BZW04-7V8
|
Diotec Semiconductor | 功能相似 | DO-15 |
Discrete Devices -Diode-TVS
|
||
|
|
Galaxy Semi-Conductor | 功能相似 |
Discrete Devices -Diode-TVS
|
|||
|
|
Vishay Semiconductor | 功能相似 |
Discrete Devices -Diode-TVS
|
|||
BZW04-7V8
|
Promax | 功能相似 | DO-41 |
Discrete Devices -Diode-TVS
|
||
P4KE91CA-G
|
Comchip Technology | 功能相似 | DO-41-2 |
ESD 抑制器/TVS 二极管 400W, 91V,Bidir
|
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