Technical parameters/load current: | 18 A |
|
Technical parameters/forward voltage: | 1.15 V |
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Technical parameters/reverse recovery time: | 25 ns |
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Technical parameters/Maximum reverse voltage (Vrrm): | 200 V |
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Technical parameters/forward current: | 18000 mA |
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Technical parameters/Maximum forward surge current (Ifsm): | 150 A |
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Technical parameters/maximum reverse leakage current (Ir): | 10 uA |
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Technical parameters/forward voltage (Max): | 1.15V @20A |
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Technical parameters/forward current (Max): | 18 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.54 mm |
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Dimensions/Width: | 4.7 mm |
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Dimensions/Height: | 8.89 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BYQ28E-200/H,127
|
NXP | 功能相似 | TO-220-3 |
Byq28e-200 - 双倍超快速功率二极管
|
||
BYV32-200G
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON SEMICONDUCTOR BYV32-200G 快速/超快二极管, 双共阴极, 200 V, 20 A, 1.15 V, 35 ns, 100 A
|
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