Technical parameters/rated voltage (DC): | 55.0 V |
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Technical parameters/rated current: | 20.3 A |
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Technical parameters/polarity: | N-CH |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Continuous drain current (Ids): | 20.3A |
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Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-220 |
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Dimensions/Packaging: | TO-220 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF9Z34NPBF
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IFA | 功能相似 |
P 通道功率 MOSFET 超过 8A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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IRFR024NTRPBF
|
International Rectifier | 功能相似 | TO-252-3 |
INFINEON IRFR024NTRPBF 晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 4 V
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