Technical parameters/Maximum reverse voltage (Vrrm): | 800V |
|
Technical parameters/forward current: | 3.2 A |
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Technical parameters/Maximum forward surge current (Ifsm): | 120 A |
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Encapsulation parameters/Encapsulation: | BU |
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Dimensions/Packaging: | BU |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BU1008-M3/51
|
Vishay Semiconductor | 完全替代 | SIP-4 |
Diode Rectifier Bridge Single 800V 3.2A 4Pin(4+Tab) Case BU Tray
|
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