Technical parameters/dissipated power: | 570 W |
|
Technical parameters/breakdown voltage (collector emitter): | 600 V |
|
Encapsulation parameters/installation method: | Screw |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MG200J6ES60
|
Toshiba | 功能相似 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
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