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Model BSH114
Description N沟道增强型网络场效晶体管 N-channel enhancement mode field effect transistor
Product QR code
Brand: NXP
Packaging TO-236
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3068) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Continuous drain current (Ids):

0.85A

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-236

 

Dimensions/Packaging:

TO-236

 

Other/Product Lifecycle:

Unknown

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSH114,215 BSH114,215 Nexperia 功能相似 SOT-23-3
N 通道 MOSFET，高达 0.9A，NXP Semiconductors ### MOSFET 晶体管，NXP Semiconductors
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