Technical parameters/rise/fall time: | 15000 ns |
|
Technical parameters/peak wavelength: | 880 nm |
|
Technical parameters/descent time (Max): | 15000 ns |
|
Technical parameters/rise time (Max): | 15000 ns |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Packaging: | TO-18 |
|
Physical parameters/operating temperature: | -40℃ ~ 125℃ |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | RoHS-conform |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 |
Photo Transistor, 880nm, HERMETICALLY SEALED, METAL, TO-18, 3
|
|||
BPX43
|
Osram Opto | 功能相似 | TO-18 |
Photo Transistor, 880nm, HERMETICALLY SEALED, METAL, TO-18, 3
|
||
|
|
Infineon | 功能相似 |
NPN - Silizium - Fototransistor NPN硅光电晶体管 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
|
|||
BPX43-4
|
Osram Opto | 功能相似 | TO-18 |
NPN - Silizium - Fototransistor NPN硅光电晶体管 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
|
||
|
|
Siemens AG | 功能相似 |
NPN - Silizium - Fototransistor NPN硅光电晶体管 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review