Technical parameters/frequency: | 860 MHz |
|
Technical parameters/drain source resistance: | 9 Ω |
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Technical parameters/Leakage source breakdown voltage: | 104 V |
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Technical parameters/output power: | 2.5 W |
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Technical parameters/gain: | 22.8 dB |
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Technical parameters/test current: | 15 mA |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 12 |
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Encapsulation parameters/Encapsulation: | SOT-1352-12 |
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Dimensions/Packaging: | SOT-1352-12 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLP10H603Z
|
Ampleon USA | 完全替代 | VDFN-12 |
RF Power Transistor, 0.01 to 1.4GHz, 2.5W, 22.8dB, 50V, SOT1352-1, LDMOS
|
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