Technical parameters/drain source resistance: | 290 mΩ |
|
Technical parameters/Leakage source breakdown voltage: | 65 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT502B |
|
Dimensions/Length: | 20.02 mm |
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Dimensions/Width: | 9.91 mm |
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Dimensions/Height: | 4.72 mm |
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Dimensions/Packaging: | SOT502B |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF6G38LS-50
|
NXP | 功能相似 | SOT502B |
WiMAX的功率LDMOS晶体管 WiMAX power LDMOS transistor
|
||
BLF6G38LS-50,112
|
Ampleon USA | 功能相似 | SOT-502 |
Trans RF MOSFET N-CH 65V 16.5A 3Pin SOT-502B Bulk
|
||
BLF6G38LS-50,112
|
NXP | 功能相似 | SOT-502-3 |
Trans RF MOSFET N-CH 65V 16.5A 3Pin SOT-502B Bulk
|
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