Technical parameters/dissipated power: | 6000 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 1000 @5A, 3V |
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Technical parameters/rated power (Max): | 6 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 6000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-204 |
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Dimensions/Packaging: | TO-204 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tray |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: |
| |
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6231
|
Central Semiconductor | 功能相似 |
Bipolar Transistors - BJT PNP Transistor
|
|||
|
|
Microsemi | 功能相似 | TO-3 |
NTE ELECTRONICS 2N6385 Bipolar (BJT) Single Transistor, Darlington, NPN, 80V, 150W, 10A, 1000 hFE
|
||
2N6674LEADFREE
|
Central Semiconductor | 功能相似 | TO-3 |
TO-3 NPN 300V 15A
|
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