Technical parameters/number of channels: | 1 |
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Technical parameters/drain source resistance: | 540 mΩ |
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Technical parameters/polarity: | N-CH |
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Technical parameters/dissipated power: | 327 W |
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Technical parameters/threshold voltage: | 3V ~ 5V |
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Technical parameters/drain source voltage (Vds): | 600 V |
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Technical parameters/Leakage source breakdown voltage: | 600 V |
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Technical parameters/Continuous drain current (Ids): | 14A |
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Technical parameters/rise time: | 15 ns |
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Technical parameters/Input capacitance (Ciss): | 1480pF @25V(Vds) |
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Technical parameters/descent time: | 16 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 327W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXFA14N60P
|
IXYS Semiconductor | 类似代替 | TO-263-3 |
Single N-Channel 600V 300W 36NC Surface Mount Power Mosfet - TO-263
|
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