Technical parameters/dissipated power: | 3.7W (Ta), 43W (Tc) |
|
Technical parameters/Input capacitance (Ciss): | 300pF @25V(Vds) |
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Technical parameters/dissipated power (Max): | 3.7W (Ta), 43W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-263-3 |
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Dimensions/Packaging: | TO-263-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ14SPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
IRFZ14SPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
Power Field-Effect Transistor, 10A I(D), 60V, 0.2Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3Pin
|
||
IRFZ14STRL
|
Vishay Semiconductor | 功能相似 |
MOSFET N-CH 60V 10A D2PAK
|
|||
IRFZ14STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
Trans MOSFET N-CH 60V 10A 3Pin(2+Tab) D2PAK T/R
|
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