Technical parameters/rated voltage (DC): | -50.0 V |
|
Technical parameters/rated current: | -1.10 A |
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Technical parameters/number of pins: | 4 |
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Technical parameters/drain source resistance: | 0.35 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1 W |
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Technical parameters/drain source voltage (Vds): | 60 V |
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Technical parameters/Leakage source breakdown voltage: | -50.0 V |
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Technical parameters/Continuous drain current (Ids): | -1.10 A |
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Technical parameters/rise time: | 47 ns |
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Technical parameters/descent time: | 39 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | DIP-4 |
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Dimensions/Length: | 6.9 mm |
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Dimensions/Width: | 3.8 mm |
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Dimensions/Height: | 3.8 mm |
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Dimensions/Packaging: | DIP-4 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFD9010
|
Vishay Semiconductor | 完全替代 | DIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
||
IRFD9010
|
Infineon | 完全替代 | HexDIP |
MOSFET P-CH 50V 1.1A 4-DIP
|
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