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Model IRFB9N65A
Description 650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Product QR code
Brand: International Rectifier
Packaging Through Hole
Delivery time
Packaging method Bulk
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6389) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

650 V

 

Technical parameters/rated current:

8.50 A

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

167 W

 

Technical parameters/drain source voltage (Vds):

650 V

 

Technical parameters/Leakage source breakdown voltage:

650 V

 

Technical parameters/Continuous drain current (Ids):

8.50 A

 

Technical parameters/rise time:

20.0 ns

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Bulk

 

Compliant with standards/RoHS standards:

Non-Compliant

 

Compliant with standards/lead standards:

Contains Lead

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFB9N65APBF IRFB9N65APBF Vishay Siliconix 类似代替 TO-220-3
MOSFET N-CH 650V 8.5A TO-220AB
PDF
IRFB9N65APBF IRFB9N65APBF Infineon 类似代替
MOSFET N-CH 650V 8.5A TO-220AB
PDF
IRFB9N65APBF IRFB9N65APBF VISHAY 类似代替 TO-220-3
MOSFET N-CH 650V 8.5A TO-220AB
PDF

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