Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 6.00 A |
|
Technical parameters/capacitance: | 50.0 pF |
|
Technical parameters/output current: | ≤6.00 A |
|
Technical parameters/forward voltage: | 1V @3A |
|
Technical parameters/Maximum reverse voltage (Vrrm): | 200V |
|
Technical parameters/forward current: | 6 A |
|
Technical parameters/Maximum forward surge current (Ifsm): | 175 A |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SIP-4 |
|
Dimensions/Length: | 22.3 mm |
|
Dimensions/Width: | 3.56 mm |
|
Dimensions/Height: | 18.8 mm |
|
Dimensions/Packaging: | SIP-4 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
RFE International | 类似代替 |
TAIWAN SEMICONDUCTOR GBU602 二极管 桥式整流, 玻璃钝化, 单相, 100 V, 6 A, SIP, 1 V, 4 引脚
|
|||
GBU6D
|
General Semiconductor | 功能相似 | GBU-4 |
FAIRCHILD SEMICONDUCTOR GBU6D. 桥式整流器
|
||
GBU6D
|
EIC | 功能相似 |
FAIRCHILD SEMICONDUCTOR GBU6D. 桥式整流器
|
|||
GBU6D
|
Microsemi | 功能相似 |
FAIRCHILD SEMICONDUCTOR GBU6D. 桥式整流器
|
|||
GBU6D-E3/45
|
VISHAY | 功能相似 | SIP-4 |
VISHAY GBU6D-E3/45 二极管 桥式整流, 单相, 200 V, 6 A, SIP, 1 V, 4 引脚
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review