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Model FQD7N10LTF
Description Trans MOSFET N-CH 100V 5.8A 3Pin(2+Tab) DPAK T/R
Product QR code
Brand: Fairchild
Packaging TO-252-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4654) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

100 V

 

Technical parameters/rated current:

5.80 A

 

Technical parameters/drain source resistance:

350 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5W (Ta), 25W (Tc)

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Leakage source breakdown voltage:

100 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

5.80 A

 

Technical parameters/Input capacitance (Ciss):

290pF @25V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/dissipated power (Max):

2.5W (Ta), 25W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-252-3

 

Dimensions/Packaging:

TO-252-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
FQD7N10LTM FQD7N10LTM ON Semiconductor 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD7N10LTM 晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
PDF
FQD7N10LTM FQD7N10LTM Fairchild 类似代替 TO-252-3
FAIRCHILD SEMICONDUCTOR FQD7N10LTM 晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
PDF

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