Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 4.9 Ω |
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Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/drain source voltage (Vds): | 500 V |
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Technical parameters/Leakage source breakdown voltage: | 500 V |
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Technical parameters/Continuous drain current (Ids): | 2.1A |
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Technical parameters/rise time: | 56 ns |
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Technical parameters/Input capacitance (Ciss): | 660pF @25V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 45 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 2.5W (Ta), 50W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-252-3 |
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Dimensions/Length: | 6.73 mm |
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Dimensions/Width: | 6.22 mm |
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Dimensions/Height: | 2.39 mm |
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Dimensions/Packaging: | TO-252-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQD3P50TF
|
Fairchild | 类似代替 | TO-252-3 |
Trans MOSFET P-CH 500V 2.1A 3Pin(2+Tab) DPAK T/R
|
||
FQD3P50TF
|
ON Semiconductor | 类似代替 | TO-252-3 |
Trans MOSFET P-CH 500V 2.1A 3Pin(2+Tab) DPAK T/R
|
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