Technical parameters/rated voltage (DC): | 20.0 V |
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Technical parameters/rated current: | 8.00 A |
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Technical parameters/drain source resistance: | 17.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/Input capacitance: | 1.46 nF |
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Technical parameters/gate charge: | 14.0 nC |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±8.00 V |
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Technical parameters/Continuous drain current (Ids): | 8.00 A |
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Technical parameters/rise time: | 14 ns |
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Technical parameters/Input capacitance (Ciss): | 1455pF @10V(Vds) |
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Technical parameters/rated power (Max): | 900 mW |
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Technical parameters/descent time: | 13 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 4.9 mm |
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Dimensions/Width: | 3.9 mm |
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Dimensions/Height: | 1.75 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6911
|
ON Semiconductor | 类似代替 | SOIC-8 |
FDS6911 系列 20 V 13 mOhm 双 N沟道 逻辑电平 PowerTrench® MOSFET-SOIC-8
|
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