Chip AI consultant
Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.075 Ω |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 500 mW |
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Technical parameters/threshold voltage: | 950 mV |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20 V |
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Technical parameters/Continuous drain current (Ids): | 2.5A |
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Technical parameters/rise time: | 3.6 ns |
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Technical parameters/Input capacitance (Ciss): | 189pF @10V(Vds) |
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Technical parameters/descent time: | 6.7 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | PICOSTAR-3 |
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Dimensions/Length: | 1.04 mm |
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Dimensions/Width: | 0.64 mm |
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Dimensions/Height: | 0.35 mm |
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Dimensions/Packaging: | PICOSTAR-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Compliant with standard/REACH SVHC version: | 2015/06/15 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD25481F4
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TI | 类似代替 | PICOSTAR-3 |
P 通道 NexFET 功率 MOSFET，CSD25481W4
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