Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 350 mW |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.2A |
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Technical parameters/minimum current amplification factor (hFE): | 90 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-563-6 |
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Dimensions/Length: | 1.6 mm |
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Dimensions/Width: | 1.2 mm |
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Dimensions/Height: | 0.58 mm |
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Dimensions/Packaging: | SOT-563-6 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Micro Commercial Components | 功能相似 |
SOT-563 Plastic-Encapsulate Biploar TransistorsO
|
|||
MMDT3904V-7
|
Diodes | 功能相似 | SOT-563-6 |
MMDT3904V 系列 双 NPN 40 V 200 mW 小信号 晶体管 - SOT-563
|
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