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Technical parameters/polarity: | NPN |
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Technical parameters/breakdown voltage (collector emitter): | 100 V |
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Technical parameters/Maximum allowable collector current: | 3A |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | DPAK |
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Dimensions/Packaging: | DPAK |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | Non-Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
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Motorola | 功能相似 |
ON SEMICONDUCTOR MJD31CG 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
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MJD31CT4G
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ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD31CT4G 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
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Fairchild | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD31CT4G 单晶体管 双极, 通用, NPN, 100 V, 3 MHz, 15 W, 3 A, 10 hFE
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