Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | TO-252 |
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Dimensions/Packaging: | TO-252 |
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Other/Product Features: | NChannel enhanced power |
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Other/drain source breakdown voltage (maximum): | MOSFET |
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Other/continuous drain current (maximum): | 60V |
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Other/maximum power dissipation: | 75A |
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Other/gate source breakdown voltage: | 100W |
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Other/drain source conduction resistance (typical value): | 20V |
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Other/(10V): | 9.1mΩ |
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Other/Packaging: | TO252 |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
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