Technical parameters/forward voltage: | 840mV @10A |
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Technical parameters/Maximum forward surge current (Ifsm): | 125 A |
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Technical parameters/forward voltage (Max): | 700mV @5A |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Width: | 4.82 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR1045CT
|
Diodes | 功能相似 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
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|
|
Luguang Electronic | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
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|
|
Gaomi Xinghe Electronics | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
|||
MBR1045CT
|
Taiwan Semiconductor | 功能相似 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR1045CT
|
Galaxy Semi-Conductor | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
|||
|
|
LiteOn | 功能相似 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
|
|
Micro Commercial Components | 功能相似 |
Product Specification
|
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MBRF1045CT
|
Taiwan Semiconductor | 功能相似 | ITO-220-3 |
Product Specification
|
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