Technical parameters/number of channels: | 1 |
|
Technical parameters/drain source resistance: | 8 mΩ |
|
Technical parameters/dissipated power: | 272 W |
|
Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Leakage source breakdown voltage: | 55 V |
|
Technical parameters/rise time: | 115 ns |
|
Technical parameters/Input capacitance (Ciss): | 4200pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 272 W |
|
Technical parameters/descent time: | 110 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
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Technical parameters/dissipated power (Max): | 272W (Tc) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 7 |
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Encapsulation parameters/Encapsulation: | TO-263-7 |
|
Dimensions/Length: | 10.3 mm |
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Dimensions/Width: | 9.4 mm |
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Dimensions/Height: | 4.5 mm |
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Dimensions/Packaging: | TO-263-7 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK7C08-55AITE
|
Nexperia | 完全替代 |
N沟道TrenchPLUS标准水平FET N-channel TrenchPLUS standard level FET
|
|||
BUK7C08-55AITE,118
|
NXP | 功能相似 | TO-263-7 |
MOSFET N-CH 55V 75A D2PAK
|
||
BUK7C08-55AITE,118
|
Nexperia | 功能相似 | TO-263-7 |
MOSFET N-CH 55V 75A D2PAK
|
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