Technical parameters/dissipated power: | 203 W |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/rise time: | 51 ns |
|
Technical parameters/Input capacitance (Ciss): | 3789pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 203 W |
|
Technical parameters/descent time: | 56 ns |
|
Technical parameters/dissipated power (Max): | 203W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BUK765R2-40B
|
NXP | 功能相似 | D2PAK |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
||
BUK765R2-40B
|
Philips | 功能相似 |
N沟道的TrenchMOS标准水平FET N-channel TrenchMOS standard level FET
|
|||
BUK765R2-40B,118
|
NXP | 类似代替 | TO-263-3 |
N沟道 VDS=40V VGS=±20V ID=75A P=203W
|
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