Technical parameters/drain source voltage (Vds): | 100 V |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Catalog: | MOS(Field Effect Transistor |
|
Other/leakage source voltage (Vdss): | 100V |
|
Other/continuous drain current (Id) (at 25 ° C): | 200mA |
|
Other/Gate Source Threshold Voltage: | 3V @ 250uA |
|
Other/leakage source conduction resistance: | 1.06Ω @ 200mA,10V |
|
Other/maximum power dissipation (Ta=25 ° C): | 300mW |
|
Other/Type: | Nchannel |
|
Other/Product Code: | C431506 |
|
Other/Packaging Specifications: | SOT-23 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N7002-7-F
|
Multicomp | 功能相似 | SOT-23 |
2N7002-7-F 编带
|
||
BSS123-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
ZVP1320FTA
|
Diodes | 功能相似 | SOT-23-3 |
ZVP1320FTA 编带
|
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