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Model BSO040N03MSGXUMA1
Description 晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0033 ohm, 10 V, 2 V
Product QR code
Brand: Infineon
Packaging PG-DSO-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
10.76  yuan 10.76yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3666) Minimum order quantity(1)
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Technical parameters/rated power:

1.56 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

3.3 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

1.56 W

 

Technical parameters/threshold voltage:

1 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30 V

 

Technical parameters/Continuous drain current (Ids):

16A

 

Technical parameters/rise time:

9 ns

 

Technical parameters/Input capacitance (Ciss):

5700pF @15V(Vds)

 

Technical parameters/rated power (Max):

1.56 W

 

Technical parameters/descent time:

9 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

55 ℃

 

Technical parameters/dissipated power (Max):

1.56W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

PG-DSO-8

 

Dimensions/Length:

4.9 mm

 

Dimensions/Width:

3.9 mm

 

Dimensions/Height:

1.75 mm

 

Dimensions/Packaging:

PG-DSO-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Other/Manufacturing Applications:

VRD/VRM, Onboard charger, Mainboard

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSO040N03MSG BSO040N03MSG Infineon 完全替代
的OptiMOS ™ 3 M系列功率MOSFET OptiMOS™3 M-Series Power-MOSFET
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