Technical parameters/drain source resistance: | 135 mΩ |
|
Technical parameters/Leakage source breakdown voltage: | 65 V |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-502 |
|
Dimensions/Length: | 20.02 mm |
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Dimensions/Width: | 9.91 mm |
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Dimensions/Height: | 4.72 mm |
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Dimensions/Packaging: | SOT-502 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF6G27S-45,112
|
NXP | 功能相似 | SOT-608-3 |
Trans RF MOSFET N-CH 65V 20A 3Pin CDFM Bulk
|
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