BFR106,215 In Stock|PDF|Datasheet|Price|Agent[BFR106,215 Alternative|Silk Screen|Technology|Solution Development]-ICGOODFIND

Specification parameters
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Technical parameters/frequency:

5000 MHz

Technical parameters/number of pins:

Technical parameters/polarity:

NPN

Technical parameters/dissipated power:

500 mW

Technical parameters/gain bandwidth product:

5000 MHz

Technical parameters/breakdown voltage (collector emitter):

15 V

Technical parameters/gain:

11.5 dB

Technical parameters/minimum current amplification factor (hFE):

25 @50mA, 9V

Technical parameters/maximum current amplification factor (hFE):

Technical parameters/rated power (Max):

500 mW

Technical parameters/DC current gain (hFE):

Technical parameters/operating temperature (Max):

175 ℃

Technical parameters/operating temperature (Min):

-65 ℃

Technical parameters/dissipated power (Max):

500 mW

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOT-23-3

Dimensions/Length:

3 mm

Dimensions/Width:

1.4 mm

Dimensions/Height:

1 mm

Dimensions/Packaging:

SOT-23-3

Physical parameters/materials:

Silicon

Physical parameters/weight:

0.003215970116 kg

Physical parameters/operating temperature:

175℃ (TJ)

Other/Product Lifecycle:

Obsolete

Other/Packaging Methods:

Tape & Reel (TR)

Other/Manufacturing Applications:

Industrial, RF communication, power management

Compliant with standards/RoHS standards:

RoHS Compliant

Compliant with standards/lead standards:

Lead Free

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
106T	Molex	功能相似		TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SST, 3 PIN, BIP RF Small Signal	PDF
BFR106	Infineon	功能相似	SOT-23	NXP BFR106 晶体管双极-射频, NPN, 15 V, 5 GHz, 500 mW, 100 mA, 80 hFE	PDF
BFR106	NXP	功能相似	SOT-23	NXP BFR106 晶体管双极-射频, NPN, 15 V, 5 GHz, 500 mW, 100 mA, 80 hFE	PDF
BFR106	Philips	功能相似	SOT-23	NXP BFR106 晶体管双极-射频, NPN, 15 V, 5 GHz, 500 mW, 100 mA, 80 hFE	PDF
FR106	Taitron	功能相似		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236
FR106	Siemens Semiconductor	功能相似		RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236	PDF
FR106	Leshan Radio	功能相似	DO-41	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-236	PDF

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Product service

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CONTACT US

ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643