Technical parameters/frequency: | 400 MHz |
|
Technical parameters/rated current: | 30 mA |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 180 mW |
|
Technical parameters/drain source voltage (Vds): | 6.00 V |
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Technical parameters/Continuous drain current (Ids): | 30.0 mA |
|
Technical parameters/gain: | 30 dB |
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Technical parameters/test current: | 12 mA |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 180 mW |
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Technical parameters/rated voltage: | 6 V |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | TO-253-4 |
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Dimensions/Packaging: | TO-253-4 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BF1212
|
NXP | 功能相似 | SOT-143 |
N沟道双栅极的MOS- FET的 N-channel dual-gate MOS-FETs
|
||
BF1212
|
NXP | 功能相似 | SOT-143 |
N沟道双栅极的MOS- FET的 N-channel dual-gate MOS-FETs
|
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