Technical parameters/frequency: | 3 MHz |
|
Technical parameters/dissipated power: | 36 W |
|
Technical parameters/breakdown voltage (collector emitter): | 32 V |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @10mA, 5V |
|
Technical parameters/rated power (Max): | 36 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 36000 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-126-3 |
|
Dimensions/Packaging: | TO-126-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Rail, Tube |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD435STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
Trans GP BJT NPN 32V 4A 3Pin(3+Tab) TO-126 Rail
|
||
BD435STU
|
Fairchild | 类似代替 | TO-126-3 |
Trans GP BJT NPN 32V 4A 3Pin(3+Tab) TO-126 Rail
|
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