Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 80 V |
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Technical parameters/Maximum allowable collector current: | 10A |
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Technical parameters/minimum current amplification factor (hFE): | 20 @3A, 4V |
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Technical parameters/rated power (Max): | 3 W |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 80000 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-218-3 |
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Dimensions/Packaging: | TO-218-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD245B
|
Bourns J.W. Miller | 类似代替 | SOT-93 |
NPN硅功率晶体管 NPN SILICON POWER TRANSISTORS
|
||
D45C8
|
ON Semiconductor | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
||
D45C8
|
Fairchild | 功能相似 | TO-220-3 |
ON Semiconductor D45C8 , PNP 晶体管, 4 A, Vce=60 V, HFE:20, 32 MHz, 3引脚 TO-220封装
|
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