Technical parameters/frequency: | 150 MHz |
|
Technical parameters/rated power: | 1 W |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 1 W |
|
Technical parameters/breakdown voltage (collector emitter): | 45 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @150mA, 2V |
|
Technical parameters/rated power (Max): | 1 W |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 1000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 4 |
|
Encapsulation parameters/Encapsulation: | SOT-89 |
|
Dimensions/Packaging: | SOT-89 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCX54-10TA
|
Diodes | 类似代替 | SOT-89 |
Trans GP BJT NPN 45V 1A Automotive 4Pin(3+Tab) SOT-89 T/R
|
||
|
|
Diodes | 功能相似 | SOT-89-3 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89
|
||
BCX5416TA
|
Diodes Zetex | 功能相似 | SOT-89 |
双极晶体管 - 双极结型晶体管(BJT) Pwr Mid Perf Transistor SOT89 T&R; 1K
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review