Technical parameters/rated voltage (DC): | -45.0 V |
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Technical parameters/rated current: | -100 mA |
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Technical parameters/dissipated power: | 0.2 W |
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Technical parameters/gain bandwidth product: | 250 MHz |
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Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/minimum current amplification factor (hFE): | 210 |
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Technical parameters/maximum current amplification factor (hFE): | 500 |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 0.95 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Other/Product Lifecycle: | Not Recommended for New Designs |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Secos | 功能相似 |
-0.15A, -50V PNP Silicon General Purpose Transistor
|
|||
2SA1162
|
Toshiba | 功能相似 | SOT-23 |
-0.15A, -50V PNP Silicon General Purpose Transistor
|
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