Technical parameters/rated power: | 0.2 W |
|
Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/minimum current amplification factor (hFE): | 220 @2mA, 5V |
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Technical parameters/rated power (Max): | 200 mW |
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Technical parameters/dissipated power (Max): | 200 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-323-3 |
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Dimensions/Packaging: | SOT-323-3 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857BW,115
|
NXP | 完全替代 | SOT-323-3 |
BC857BW 系列 PNP 45 V 100 mA 表面贴装 通用 晶体管 - SOT-323
|
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