Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 625 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 30 V |
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Technical parameters/Maximum allowable collector current: | 1A |
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Technical parameters/minimum current amplification factor (hFE): | 30000 @20mA, 2V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/gain bandwidth: | 200 MHz |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC516_D27Z
|
Fairchild | 完全替代 | TO-226-3 |
FAIRCHILD SEMICONDUCTOR BC516_D27Z 单晶体管 双极, PNP, -30 V, 200 MHz, 625 mW, -1 A, 30000 hFE
|
||
BC516_D27Z
|
ON Semiconductor | 完全替代 | TO-92 |
FAIRCHILD SEMICONDUCTOR BC516_D27Z 单晶体管 双极, PNP, -30 V, 200 MHz, 625 mW, -1 A, 30000 hFE
|
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