Technical parameters/rated voltage (DC): | -45.0 V |
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Technical parameters/rated current: | -500 mA |
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Technical parameters/dissipated power: | 330 mW |
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Technical parameters/breakdown voltage (collector emitter): | 45 V |
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Technical parameters/minimum current amplification factor (hFE): | 250 @100mA, 1V |
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Technical parameters/rated power (Max): | 330 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 330 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 2.9 mm |
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Dimensions/Width: | 1.3 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC807-40,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia BC807-40,215 , PNP 晶体管, 500 mA, Vce=45 V, HFE:40, 80 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
||
BC807-40LT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC807-40LT3G Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE 新
|
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