Technical parameters/number of pins: | 2 |
|
Technical parameters/forward voltage: | 1.25 V |
|
Technical parameters/dissipated power: | 375 mW |
|
Technical parameters/thermal resistance: | 330℃/W (RθJA) |
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Technical parameters/reverse recovery time: | 3 µs |
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Technical parameters/forward current: | 215 mA |
|
Technical parameters/Maximum forward surge current (Ifsm): | 4 A |
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Technical parameters/forward voltage (Max): | 1.25 V |
|
Technical parameters/forward current (Max): | 215 mA |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/operating temperature: | 150℃ (Max) |
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Technical parameters/dissipated power (Max): | 375 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 2 |
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Encapsulation parameters/Encapsulation: | SOD-123F |
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Dimensions/Length: | 2.7 mm |
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Dimensions/Width: | 1.7 mm |
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Dimensions/Height: | 1.2 mm |
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Dimensions/Packaging: | SOD-123F |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Other/Manufacturing Applications: | industry |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BAS116H
|
Nexperia | 类似代替 | SOD-123F |
NXP Semiconductors ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容 ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
||
BAS116H
|
Philips | 类似代替 |
NXP Semiconductors ### 特点 支持自定义高密度电路设计 提供低泄漏和高电压类型 高切换速度 低电容 ### 二极管和整流器，NXP Semiconductors NXP 以不同封装和配置提供广泛的开关二极管。
|
|||
|
BAT721C,215
|
Philips | 功能相似 | TO-236 |
肖特基势垒二极管，200mA 至 500mA，Nexperia 高效 超小薄型表面安装封装 经优化适用于低正向电压降和高结温 低电容 可忽略的功率切换损耗 低漏泄电流
|
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