Chip AI consultant
Encapsulation parameters/Encapsulation: | DFN |
|
Dimensions/Packaging: | DFN |
|
Other/Cos (pF): | 400 |
|
Other/FET types: | N-Channel |
|
Other/Gate Voltage Vgs: | 12V |
|
Other/Rds On (Max) @ Id, Vgs: | 2.8mΩ@10V |
|
Other/Crss (pF): | 60 |
|
Other/drain source voltage Vds: | 30V |
|
Other/Rds On (Max) @ 4.5V: | 3.5mΩ |
|
Other/ESD Dior: | No |
|
Other/Ciss (pF): | 1900 |
|
Other/Terr (ns): | 12 |
|
Other/Qrr (nC): | 21.5 |
|
Other/Qgd (nC): | 3.6 |
|
Other/VGS (th): | 2 |
|
Other/QG * (nC): | 13 |
|
Other/Pd - power dissipation (Max): | 32.5W |
|
Other/continuous drain current Id: | 85A |
|
Other Schottky Dior: | No |
|
Other/Packaging/Shell: | DFN 5x6 EP |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review