Chip AI consultant
Encapsulation parameters/Encapsulation: | DFN |
|
Dimensions/Packaging: | DFN |
|
Other/Packaging/Shell: | DFN 5x6 |
|
Other/Td (on) (ns): | 15 |
|
Other/Cos (pF): | 2000 |
|
Other/FET types: | N-Channel |
|
Other/Gate Voltage Vgs: | 20V |
|
Other/Rds On (Max) @ Id, Vgs: | 0.73mΩ@10V |
|
Other/Crss (pF): | 1400 |
|
Other/drain source voltage Vds: | 25V |
|
Other/Rds On (Max) @ 4.5V: | 1.08mΩ |
|
Other/ESD Dior: | No |
|
Other/Ciss (pF): | 15200 |
|
Other/Terr (ns): | 25 |
|
Other/Qrr (nC): | 70 |
|
Other/Td (off) (ns): | 160 |
|
Other/VGS (th): | 1.6 |
|
Other/QG * (nC): | 115 |
|
Other/Pd - power dissipation (Max): | 250W |
|
Other/continuous drain current Id: | 400A |
|
Other Schottky Dior: | No |
|
Other/Qgd (nC): | 35 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review