Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Other/EU RoHS: | Compliant with Exemption |
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Other/Category: | Power MOSFET |
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Other/Configuration: | Dual Dual Drain |
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Other/Channel Mode: | Enhancement |
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Other/Channel Type: | P|N |
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Other/Number of Elements per Chip: | 2 |
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Other/Maximum Drain Source Voltage (V): | 30 |
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Other/Maximum Gate Source Voltage (V): | ±20 |
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Other/Maximum Continuous Drain Current (A): | 5@N Channel|6@P Channel |
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Other/Maximum Drain Source Resistance (mOhm): | 50@10V@N Channel|38@10V@P Channel |
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Other/Typical Gate Charge @ Vgs (nC): | 2@4.5V@N Channel|4.6@4.5V@P Channel|9.2@10V|4.05@10V |
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Other/Typical Gate Charge @ 10V (nC): | 9.2@P Channel|4.05@N Channel |
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Other/Typical Input Capacity @ Vds (pF): | 170@15V@N Channel|520@15V@P Channel |
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Other/Maximum Power Dissection (mW): | 2100@N Channel|2500@P Channel |
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Other/Typical Fall Time (ns): | 7@P Channel|15.5@N Channel |
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Other/Typical Rise Time (ns): | 1.5@N Channel|5.5@P Channel |
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Other/Typical Turn Off Delay Time (ns): | 18.5@N Channel|19@P Channel |
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Other/Typical Turn On Delay Time (ns): | 7.5@P Channel|4.5@N Channel |
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Other/Minimum Operating Temperature (° C): | -55 |
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Other/Maximum Operating Temperature (° C): | 150 |
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Other/Military: | No |
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Compliant with standards/RoHS standards: |
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