Technical parameters/forward voltage: | 1.5V @9A |
|
Technical parameters/reverse recovery time: | 300 ns |
|
Technical parameters/forward voltage (Max): | 1.5V @9A |
|
Technical parameters/forward current (Max): | 3 A |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | B-Package-2 |
|
Dimensions/Packaging: | B-Package-2 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: |
| |
Compliant with standards/military grade: | Yes |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
UNI-ROYAL | 功能相似 | DO-27 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
1N5402G
|
LiteOn | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
|
|
Galaxy Semi-Conductor | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
|
|
Shanghai Sunrise Electronics | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
DC Components | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
Taiwan Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
|
1N5402G
|
Bytes | 功能相似 |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
|||
1N5402G
|
ON Semiconductor | 功能相似 | DO-201AD |
ON SEMICONDUCTOR 1N5402G. 快速恢复功率整流器
|
||
|
|
ON Semiconductor | 功能相似 | DO-201AD |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
||
|
|
Zowie Technology | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
|
Vishay Semiconductor | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
|
ETC | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
|
Rochester | 功能相似 | DO-201AD |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
||
|
EGP30D
|
Shanghai Lunsure Electronic | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
EGP30D
|
Jinan Jing Heng Electronics Co | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
EGP30D
|
Sunmate | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
EGP30D
|
Rugao Dachang Electronics | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
|
EGP30D
|
Unspecified | 功能相似 |
快速/超快二极管, 200 V, 3 A, 单, 950 mV, 50 ns, 125 A
|
|||
JANTX1N5806
|
Sensitron Semiconductor | 功能相似 | Case 106 |
Diode Switching Diode 150V 2.5A 2Pin Case G-111
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review